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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.8: Poster
Dienstag, 10. März 2026, 18:00–20:00, P1
Influence of hBN encapsulation on the degradation process of Hittorf phosphorus — •Maximilian Scharpey1, Daniel Wigger2, Nicolas Pajusco3, Iker Herrero3, Rainer Hillenbrand3, and Iris Niehues1 — 1Institute of Physics, University of Münster, Germany — 2Department of Physics, University of Münster, Germany — 3CIC nanoGUNE BRTA, Donostia-San Sebastián, Spain
The van-der-Waals material Hittorf phosphorus (HP, violet phosphorus) has attracted increasing interest due to its promising semiconducting properties including high charge carrier mobility, a tuneable bandgap, and high optical absorption in the visible [1]. However, its degradation poses significant challenges for device applications.
Here, we investigate the influence of hexagonal boron nitride encapsulation on the optical properties of thin flakes of mechanically exfoliated HP.
By comparing photoluminescence and nanoscale Fourier transform infrared spectroscopy of encapsulated and non-encapsulated HP samples over a period of days, we gained insight on the degradation process.
In addition, we used scattering-type scanning near field optical microscopy to localize the origin sites of degradation under the encapsulation layer with a resolution beyond the diffraction limit.
These findings contribute to a deeper understanding of the degradation process of HP, which will play a crucial role in stabilizing this material for future applications.
[1] Ahmad et al., Adv. Funct. Mater. 34, 2410723 (2024)
Keywords: phosphorus; hBN encapsulation; degradation; near-field; infrared