Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: 2D Materials IV – Emerging materials and properties

HL 24.11: Talk

Wednesday, March 11, 2026, 12:15–12:30, POT/0081

Tuning the Metal-to-Semiconductor Transition in Bilayer PtTe2 via Electric Field Control — •Sharieh Jamalzadeh Kheirabadi, Farzan Gity, Paul K.Hurley, and Lida Ansari — Tyndall National Institute, University College Cork, Cork, Ireland

Abstract: One effective method to induce a bandgap in graphene is applying a perpendicular electric field to its bilayer structure [1]. This process works by breaking the inversion symmetry of BL gra-phene with an external electric field, leading to electrostatic screening between the two layers and splitting the π and π* bands that intersect at the Fermi level [2]. Platinum ditelluride (PtTe2) has garnered significant interest due to its unique physical and chemical properties [3,4]. PtTe2 retains its semi-metallic properties for thicknesses down to BL but transits to a semiconductor when re-duced to a monolayer due to the quantum confinement effect [5]. We demonstrate that a bandgap emerges in BL-PtTe2 when an electric field is applied perpendicular to the layers, ultimately trans-forming the system into a semiconductor. We have identified reliable critical electric fields within the range of 2-3 MV/cm to achieve a bandgap comparable to conventional semiconductors in BL-PtTe2. Further, we have investigated the effect of a vertical electric field on a BL-PtTe2 based field effect transistor using density functional theory (DFT) and non-equilibrium Green*s function (NEGF) methods. The results demonstrate device performance compatible with low-power require-ments for ION and IOFF, as projected in the IRDS 2028 roadmap [6].

Keywords: bilayer PtTe2; metal-to-semiconductor transition; electric field; density functional theory; TMDs