Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 24: 2D Materials IV – Emerging materials and properties
HL 24.3: Talk
Wednesday, March 11, 2026, 10:00–10:15, POT/0081
Wafer-scale growth of hexagonal boron nitride thin films using pulsed laser deposition — •Daniel Klenkert1,2, Benedikt Winter1, Paul Konrad2, Andreas Sperlich2, Vladimir Dyakonov2, and Jens Ebbecke1 — 1Technology Campus Teisnach Sensor Technology, Deggendorf Institute of Technology, 94244 Teisnach — 2Experimental Physics 6, Julius-Maximilians-University Würzburg, 97074 Würzburg
Hexagonal boron nitride (hBN) has attracted significant attention due to its wide bandgap, high thermal conductivity and its ability to host optically active defects, which are promising as single photon emitters and for quantum sensing applications. Thus far the sample preparation of hBN usually relies on tape exfoliation or high temperature chemical vapor deposition. Here we report on our progress using an alternative approach to prepare thin films of hBN on different substrates: pulsed laser deposition. This enabled the preparation of microcrystalline hBN layers on large scale wafer substrates at temperatures below 850°C. The stoichiometry preserving properties of pulsed laser deposition also allows for the preparation of carbon doped thin films. These are especially interesting for research on carbon related, optically active defects, which are noted for their high brightness and single photon purity.
Keywords: hexagonal boron nitride; pulsed laser deposition; 2D materials; Thin films