Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: 2D Materials IV – Emerging materials and properties

HL 24.6: Talk

Wednesday, March 11, 2026, 10:45–11:00, POT/0081

Observation of Bernal Stacking in Few-Layer Graphene on C face Silicon Carbide — •Jonas Rose, Oliver Brandt, Michael Hanke, Joao Marcelo Lopes, Philipp John, and Hans Tornatzky — Paul-Drude-Institut, Berlin

Epitaxial growth of few-layer graphene (FLG) on SiC(0001) (C face) is widely assumed to yield films with rotational disorder, in contrast to the well-ordered Bernal (AB) stacking typically associated with SiC(0001) (Si face) growth. In this work, we show that surface graphitization on the C face of SiC can, under appropriate conditions, produce FLG with genuine AB stacking and remarkably low mosaic spread. Using detailed Raman spectroscopy, supported by complementary structural characterization, we identify clear spectral signatures of Bernal ordering, including a well-defined 2D-band lineshape. These findings demonstrate that ordered stacking is achievable on the C face under controlled sublimation conditions. We will present our full spectroscopic analysis and discuss its implications for the structural and electronic properties of the grown FLG.

Keywords: graphene; Raman spectroscopy; stacking order