Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: 2D Materials IV – Emerging materials and properties

HL 24.9: Talk

Wednesday, March 11, 2026, 11:45–12:00, POT/0081

Investigating the Ferroelectric Potential Landscape of 3R-MoS₂ through Optical Measurements — •Jan-Niklas Heidkamp¹, Johannes Schwandt-Krause¹, Swarup Deb^1,2,3, Takashi Taniguchi⁴, Kenji Watanabe⁴, Rico Schwartz¹, and Tobias Korn¹ — ¹Institute of Physics, University of Rostock, Rostock, Germany — ²Homi Bhabha National Institute, Mumbai, India — ³Saha Institute of Nuclear Physics, Kolkata, India — ⁴National Institute for Material Science, Tsukuba, Japan

In recent years, sliding ferroelectricity has emerged as a topic of significant interest due to its possible application in non-volatile, reconfigurable storage devices. This phenomenon is unique to two-dimensional van der Waals materials, where out-of-plane ferroelectric polarization switching is induced by relative in-plane sliding of adjacent layers. The intrinsic stacking order influences the resulting polarization, creating distinct polarization regions separated by domain walls. These can be manipulated using an applied vertical electric field, enabling a switchable system that retains the environmental robustness of van der Waals materials. This study investigates 3R-MoS₂ using various optical measurement techniques at room temperature and reveals apparent signal changes corresponding to different ferroelectric stacking orders and variations in layer count. Our findings demonstrate that fast optical mapping at room temperature is a reliable method for probing ferroelectric potential steps in 3R-stacked MoS₂ samples, thereby facilitating the identification of the ferroelectric configuration.

Keywords: TMDC; 3R-MoS2; sliding ferroelectric; spectroscopy