Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.10: Poster
Wednesday, March 11, 2026, 09:30–11:30, P1
GaAs nanowire networks by electrochemical etching as a universal platform for oxide and nitride architectures — •Eduard Monaico1, Sebastian Lehmann2, Elena Monaico1, Xinzhi Li2, Veaceslav Ursaki1, Ion Tiginyanu1, and Kornelius Nielsch2 — 1Technical University of Moldova, Chisinau, Moldova — 2Leibniz Institute of Solid State and Materials Research, Dresden, Germany
GaAs nanowire networks obtained by electrochemical etching provide a versatile platform for semiconductor-oxide-nitride architectures with controlled geometry and crystallinity. Depending on the orientation of the GaAs substrate ((100), (111)B, (001)), the resulting nanowires can be tilted, vertical, or oriented parallel to the surface. Formed by selective electrochemical dissolution rather than epitaxial growth, they retain the structural quality of the bulk crystal, offering a low-defect scaffold suitable for subsequent transformations.
In this work, we explore their conversion into oxides and nitrides. Thermal treatment in argon with 3% oxygen led to selective formation of Ga2O3 on the nanowires while preserving the GaAs substrate, confirmed by SEM, EDX, XRD, and Raman analysis. Preliminary nitridation tests also show the feasibility of forming GaN-based architectures. These findings highlight the potential of electrochemically derived GaAs nanowire networks as a universal platform for oxide and nitride structures relevant to optoelectronics, photonics, and sensing technologies.
Acknowledgements: We thank the BMFTR and NARD for the funding of ProMoMo project DEHYCONA.
Keywords: GaAs nanowires; thermal oxidation; nitridation; GaN nanowires; functional nanostructures