Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.20: Poster

Wednesday, March 11, 2026, 09:30–11:30, P1

Determination of activation energies in vertical co-doped κ-Ga₂O₃ Schottky barrier diodes — •Elise Morawe, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik Halbleiterphysik, Leipzig, Germany

The predicted spontaneous polarization of κ-Ga₂O₃ renders this polymorph of Ga₂O₃ highly interesting for, e.g., high electron mobility transistor devices [1]. As shown by Kneiß et al., vertical Schottky barrier diodes can be realized on pulsed laser deposition (PLD) grown κ-Ga₂O₃ thin films [2]. For that, the addition of tin in the process is mandatory to induce the surfactant-mediated growth of the κ phase [3]. We present κ-Ga₂O₃ thin films grown by PLD on indium tin oxide (ITO) layer on different substrates: c-sapphire and yttria-stabilized zirconia (YSZ). We discuss the influence of co-doping of the κ-Ga₂O₃ thin films with ZrO₂ or SiO₂ in addition to SnO₂ on the performance of Schottky barrier diodes. Furthermore, the activation energies of Sn, Zr and Si in the κ-Ga₂O₃ are determined by thermal admittance spectroscopy.

[1] Juyeong Kim et al, Appl. Phys. Express, 11, 061101 (2018)

[2] M. Kneiß et al, J. Appl. Phys. 130, 084502 (2021)

[3] M. Kneiß et al, APL Mater. 7, 022516 (2019)

Keywords: Schottky diode; kappa gallium oxide; activation energy