Dresden 2026 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.33: Poster
Wednesday, March 11, 2026, 09:30–11:30, P1
High-Resolution Lift-Off Process for Sub-100-nm Metal Features using a PMMA Bilayer Stack — •Melina Sporkett1, Lina Trippelsdorf1,2, Thomas Grap1, Florian Lentz1, and Markus Kaiser1 — 1Helmholtz Nano Facility, Forschungszentrum Jülich, Germany — 2Peter Grünberg Institute, Forschungszentrum Jülich, Germany
A reliable and reproducible lift-off process is essential for the fabrication of high-resolution metal structures in micro- and nanotechnology. This has become increasingly important due to recent advances in quantum computing. In quantum devices, these nanoscale electrodes and interconnects are needed to realize the electrical connections to qubits.
In this study, we present a PMMA bilayer lift-off process that enables the reliable fabrication of structures below 100 nm, including fine lines and spaces. The resist stack consists of a copolymer bottom layer that creates a defined undercut and a thin PMMA/CSAR top layer. Through specifically optimized electron-beam lithography and development using a methoxypropanol-based developer, a clearly defined resist profile was achieved. Subsequent metal deposition using Ti/Au electron beam evaporation enabled the fabrication of lines with a width of only 30 nm.
These results demonstrate a robust and practical process for fabricating ultra-fine metallic interconnects for nanoelectronic applications.
Keywords: High density; interconnects; PMMA Lift-Off
