Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.34: Poster
Wednesday, March 11, 2026, 09:30–11:30, P1
Diamond devices for high contrast electrical readout of NV centers — •Melina F. V. Pees1, Lina M. Todenhagen1, Joachim P. Leibold2, Dominik B. Bucher2, and Martin S. Brandt1 — 1Walter Schottky Institut, TU Munich, Am Coulombwall 4, 85748 Garching — 2Department of Chemistry, TU Munich, Lichtenbergstr. 4, 85748 Garching
Nitrogen-vacancy (NV−) centers in diamond enable optically and electrically detected magnetic resonance (ODMR and EDMR/PDMR, respectively) and are a promising semiconductor platform for spin-based sensing. Metal contacts often influence the NV− charge state, change current flow near the surface and worsen the spin contrast in resonance measurements. In this work we investigate shallow, implanted NV ensembles under Ti/Pt/Au contacts using combined photoluminescence, photocurrent and ODMR/EDMR measurements as a function of applied bias voltage, nitrogen implantation depth and position relative to the metallized surface. We have recently shown that Pt, just as other metals, strongly influences the charge state of the NV centers underneath the contacts, leading to mostly neutral or positively charged centers. Here, we show that via application of bias voltages, the negative charge state can be partially recovered, leading to an increase in the spin contrast. This approach allows to stabilize the NV− charge state and improves the suitability of such diamond devices for quantum sensing applications.
Keywords: Nitrogen-vacancy complex; ODMR; EDMR; PDMR