Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.5: Poster
Wednesday, March 11, 2026, 09:30–11:30, P1
Tracing Charge Carrier Transport in Freestanding Core-Shell GaN Nanowires on n-Si(111) Substrates — •Juliane Koch1, Patrick Häuser2, Peter Kleinschmidt1, Lisa Liborius2, Nils Weimann2, and Thomas Hannappel1 — 1Technische Universität Ilmenau, Fundamentals of Energy Materials, Ilmenau, Germany — 2University of Duisburg-Essen, Components for High Frequency Electronics (BHE) and CENIDE, Duisburg, Germany
Precisely engineered heterojunctions are essential for advancing nanoscale systems with superior electrical performance. The structure and electrical behavior of nanostructured devices must be examined with high spatial resolution. This study investigates the charge carrier transport in freestanding core-shell GaN nanowires (NW) grown via polarity- and site-controlled metal-organic vapor phase epitaxy with a site-dependent AlN interlayer on pre-structured n-type Si(111) substrates. Multi-tip scanning tunnelling microscopy and electron beam-induced current mapping were utilized to probe local transport phenomena with high precision. Transport pathways of charge carriers within the NWs and across key interfaces were resolved. Distinct I-V characteristics appeared for different facets, while scanning transmission electron microscopy revealed no direct shell-core contact. Consequently, current transport is governed by three serially connected diodes: shell-shell, shell-core, and NW-substrate junctions. These results reveal mechanisms shaped by geometry and interfaces, advancing understanding of charge carrier dynamics in III-N nanostructures.
Keywords: Electrical characterization; Multi-tip STM; III-N; Nanowires