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HL: Fachverband Halbleiterphysik
HL 29: Quantum Transport and Quantum Hall effects (joint session HL/TT)
HL 29.4: Vortrag
Mittwoch, 11. März 2026, 15:45–16:00, POT/0006
Exploring the Influence of Electron Density on the Giant Negative Magnetoresistance — •Lina Bockhorn1, Christian Reichl2, Werner Wegscheider2, and Rolf J. Haug1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Germany — 2Laboratorium für Festkörperphysik, ETH Zürich, Switzerland
Ultra-high mobility two-dimensional electron gases exhibit a robust negative magnetoresistance at zero magnetic fields, characterized by a temperature-independent peak around B=0 T and a temperature-dependent giant negative magnetoresistance (GNMR) at higher fields [1-4].
By varying the electron density in situ, we gain valuable insights into the nature of GNMR. Our study shows a significant dependence of GNMR on electron density, suggesting that scattering potential variations [5] may not be fully addressed in current theoretical models. By examining these dependencies for different temperatures, we enhance the understanding of unresolved aspects of GNMR theory, potentially bridging the gap between experimental observations and theoretical predictions.
[1] L. Bockhorn et al., Phys. Rev. B 83, 113301 (2011).
[2] L. Bockhorn et al., Phys. Rev. B 90, 165434 (2014).
[3] L. Bockhorn et al., Appl. Phys. Lett. 108, 092103 (2016).
[4] L. Bockhorn et al., Phys. Rev. B 109, 205416 (2024).
[5] Y. Huang et al., Phys. Rev. Materials 6, L061001 (2022).
Keywords: strong negative magnetoresistance; quantum Hall effect; high mobility two-dimensional electron gases