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HL: Fachverband Halbleiterphysik
HL 31: Materials and Devices for Quantum Technology I
HL 31.3: Vortrag
Mittwoch, 11. März 2026, 15:30–15:45, POT/0251
Understanding optically detected magnetic resonance (ODMR) of InSi-Sii-defects — •Kevin Lauer1,2, Bernd Hähnlein1, Mario Bähr1, Kai Kühnlenz1, Philipp Kellner1, Dirk Schulze2, Stefan Krischok2, Alexander Rolapp3, Christian Möller1, and Thomas Ortlepp1 — 1CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany — 2Technische Universität Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, Germany — 3IMMS Institut für Mikroelektronik- und Mechatronik-Systeme gGmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
Defects from the acceptor-interstitial silicon (ASi-Sii)-defect category were found to be promising candidates for qubits in silicon-based quantum technology [1]. To further explore their qubit properties optically detected magnetic resonance (ODMR) measurements are carried out on quenched indium-doped silicon samples featuring InSi-Sii-defects. Depending on the antenna design (omega or rod) four different ODMR signals are found in the spectra. An approach to understand these spectra in frame of a triplet system formed by two holes at the InSi-Sii-defect will be discussed. On that basis possible electronic level schemes are proposed.
[1] K. Lauer et al., 'Examining the properties of the ASi-Sii-defects for their potential as qubits', presented at the GADEST but unpublished, Bad Schandau: ResearchGate, May 2024. doi: 10.13140/RG.2.2.18793.51048.
Keywords: silicon; defects; ASiSii-defect; ODMR