Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: 2D Materials VI – Optoelectronic properties

HL 36.4: Talk

Wednesday, March 11, 2026, 18:15–18:30, POT/0081

All-in-one Optoelectronic Synaptic Device with Van der Waals materials-based floating gate — •Thi Phuong Anh Bach and Sangeun Cho — Division of System Semiconductor, Dongguk University, Seoul, South Korea

Optoelectronic synaptic devices that integrate nonvolatile memory with light matter interactions offer high processing efficiency and low energy consumption for neuromorphic computing. Two-dimensional materials and their van der Waals heterostructures provide strong electronic and optical properties, while floating-gate structures emulate synaptic plasticity and enable a path toward brain-inspired, beyond-von-Neumann computation. Herein, we demonstrate a multifunctional optoelectronic synapse device based on rhenium disulfide (ReS2)/hexagonal boron nitride (hBN)/indium selenide (InSe) vdW FG structure. The device exhibits a high On/Off current ratio (>10^6), large memory window, multi-level storage behavior and excellent data retention (~10000 s) under various electrical and optical stimuli. By leveraging the thickness tunalble bandgap of InSe FG and the dynamic tunneling process of photogenerated carriers across the vdWhs interface, the device capable to work under a wide range from visible to near-infrared laser with excellent synaptic plasticity. The device replicates classical conditioning (Pavlov's dog experiment) and advanced signal-discrimination learning, and also supports reconfigurable inverter logic via electrical and optical inputs, along with neuromorphic image recognition, demonstrate its multifunctionality.

Keywords: Optoelectronic; van der Waals heterostructures; Neuromorphic; Two-dimensional materials; Floating gate