Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 37: Nitrides II – Designed properties and LED
HL 37.4: Talk
Thursday, March 12, 2026, 10:15–10:30, POT/0006
Influence of the AlGaN multi-quantum well design on the efficiency of 233 nm far-UVC LEDs grown by MOVPE — •Rebekah Seonggyeong Kim1, Marcel Schilling1, Massimo Grigoletto1,2, Jakob Höpfner1, Tim Wernicke1, and Michael Kneissl1,2 — 1Technische Universität Berlin, Institute of Physics and Astronomy, Berlin, Germany — 2Ferdinand-Braun-Institut (FBH), Berlin, Germany
Light emitting diodes (LEDs) emitting in the far ultraviolet-C (far-UVC) spectral range are promising for applications like skin safe disinfection and gas sensing. The composition and thickness of the AlGaN-multi quantum wells and barriers are crucial for the efficiency of the LEDs. In this work we investigate the impact of the last quantum well barrier's (LB) thickness (0 nm to 10 nm) and aluminum mole fraction (76% - 86%) onto the electrooptical performance of the LEDs. The LEDs with an aluminum mole fraction of 80 % and a thickness of 5 nm exhibit the highest external quantum efficiency (EQE) of 0.32 % at 16 mA (on-wafer).
Keywords: LED; UVC; AlGaN; Quantum well design; External quantum efficiency