Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 37: Nitrides II – Designed properties and LED

HL 37.5: Talk

Thursday, March 12, 2026, 10:30–10:45, POT/0006

In-rich InGaN quantum well growth for green InGaN LED — •Christoph Berger, Armin Dadgar, and André Strittmatter — Otto-von-Guericke-University, Magdeburg, Germany

Achieving high-efficiency green InGaN LEDs remains challenging due to material issues like phase instability, metallic inclusions and interface roughening. We present an optimized MOVPE growth approach that significantly improves the optical and morphological quality of green LEDs. After each QW, a growth interruption combined with a controlled temperature ramp is introduced before starting the GaN barrier growth. This sequence allows to get rid of excess indium that accumulates on the surface during QW growth, leading to smoother interfaces, a removal of indium-rich defects visible in Nomarski microscopy and consequently, a substantial suppression of a grayish appearance of the wafer. We further combine this process with hybrid MQW designs, where blue QWs are grown below a green top QW, leading to an improvement of the efficiency of the LED. The impact of different growth sequences and layer designs on the optical and structural characteristics of green LEDs will be discussed.

Keywords: MOVPE; GaN; LED; InGaN; Epitaxy