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HL: Fachverband Halbleiterphysik
HL 38: Materials and Devices for Quantum Technology II
HL 38.2: Vortrag
Donnerstag, 12. März 2026, 09:45–10:00, POT/0051
Semiconductor−superconductor membranes for nanoelectronic devices — •Thies Jansen1, Christian Reichl2, and Thomas Sand Jespersen1,3 — 1Technical University of Denmark, Anker Engelunds Vej 101 2800 Kongens Lynby — 2ETH Zürich Laboratorium für Festkörperphysik — 3Center for Quantum Devices Niels Bohr Institute, University of Copenhagen
Semiconductor-superconductor hybrid materials have become the workhorse platform for quantum devices, owing to their clean and highly transparent semiconductor-superconductor interfaces. Indium arsenide−aluminum (InAs-Al) nanowires and quantum wells are currently the dominant material systems, each offering distinct advantages: nanowires allow transfer to arbitrary substrates, while quantum wells provide two-dimensional design flexibility. Here, we introduce a new platform that combines the strengths of both systems: a semiconductor-superconductor membrane. We present the fabrication of these membranes and their initial electrical characterization through low-temperature transport measurements. The membranes are gate-tunable, and their material properties closely resemble those of both InAs nanowires and InAs quantum wells.
Keywords: Semiconductor-Superconductor hybrid; Membrane; nanoelectronic device; transport measurement