Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 38: Materials and Devices for Quantum Technology II

HL 38.3: Talk

Thursday, March 12, 2026, 10:00–10:15, POT/0051

Secondary electron detector for deterministic single ion implantation — •Priyal Dadhich, Nico Klingner, and Gregor Hlawacek — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf(HZDR), Dresden, Germany

Fault tolerant quantum computers based on donor-ion solid-state qubits require highly localized placement of single donors. To achieve this, we are developing a new setup for deterministic single-ion implantation in a FIB. To detect each implanted ion, we aim to use the secondary electrons (SEs) emitted during ion impact. A windowless silicon drift detector (SDD), biased up to +10 kV, accelerates and collects these SEs. The resulting electron-hole pairs allow us to quantify the number of emitted electrons via pile-up analysis. A critical challenge for this detection approach is the intrinsic SE emission probability. As governed by Poisson statistics, the average SE yield strongly affects detection confidence. Current work examines material-dependent absolute SE yields and practical methods to enhance SE emission while maintaining efficient extraction. Given the low SE yield per impact, optimizing the extraction geometry is crucial. A C++ simulation code using the ion-optics library IBSIMU [1] has been developed for this customised problem, to maximize SE collection and study backscattering, including possible methods to recollect backscattered electrons. References: [1] T Kalvas et. al. Rev. of Sci. Inst., 81(2), 2010.

Keywords: Spin Donor Qubits; Single Ion Implantation; Focused Ion Beams; Electron Extraction; Quantum