Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 40: Oxide Semiconductors: Transport and Spectroscopy
HL 40.2: Talk
Thursday, March 12, 2026, 09:45–10:00, POT/0251
Resonant Raman studies in rutile-Germaniumdioxide — •Kenneth Brandt1,3, Moritz Meißner1,3, Zbigniew Galazka2, Tobias Schultz2, Markus Wagner1,3, and Hans Tornatzky1,3 — 1Paul-Drude-Institut, Berlin — 2Leibniz-Institut für Kristallzüchtung, Berlin — 3Technische Universität Berlin
Ultra-wide bandgap (UWBG) semiconductors are a new research area of interest, with promised applications in power electronics. Germaniumdioxide in the rutile phase (r-GeO2) has been characterised to be such an UWBG Material with a Bandgap at about 4.5 eV. To be able to create homojunction devices, the material needs to be ambipolar dopable, which poses a challenge for β-Ga2O3, as p-type doping has yet to be achieved, while r-GeO2 is predicted to be ambipolar dopable. Raman measurements show a non typical intensity relationship, in which explicitly the Eg mode does not follow the expected I∝ω4 relation of the Raman-Scattering processes but decreases in intensity with higher excitation energies. We are performing resonant Raman studies, with excitation energies ranging from 1.2 eV provided by a tunable Ti:Sa Laser, as well as multiple additional single line Lasers with energies up to 5.1 eV, to investigate the atypical Raman response and electron-phonon coupling.
To quantise the measurements CaF2 is used as a calibration standard and GaAs is included in the measurement series to compare with literature.
Keywords: Resonant Raman Spectroscopy; Spectroscopy; rutile Germaniumdioxide; r-GeO2; Ultra-wide Bandgap Material