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HL: Fachverband Halbleiterphysik

HL 40: Oxide Semiconductors: Transport and Spectroscopy

HL 40.4: Vortrag

Donnerstag, 12. März 2026, 10:15–10:30, POT/0251

E-field modulated phase change properties in highly epitaxial VO2 thin film monitored via Raman spectra and IR transmission — •Sonika Singh¹, Rajendra Singh², and Ankur Goswami³ — ¹IIT Delhi, New Delhi, India — ²IIT Delhi, New Delhi, India — ³IIT Delhi, New Delhi, India

VO2 is a highly explored smart oxide semiconductor showing metal insulator transition (MIT) at near room temperature ~67 oC. It is observed that optoelectronic properties of highly epitaxial VO2 thin films offer several advantages as compared to polycrystalline film in terms of E-MIT and thermal switching. Here we investigate E-MIT on epitaxial VO2 deposited using PLD technique. Prior to electrical measurement, electrical contacts with 8 *m separation distance were made using Ti/Au metallization. The dual voltage sweep carried over the device demonstrated a high thermal switching ratio (around 30) between high resistive and low resistive state. Furthermore, the dual current sweep was performed on the devices reflected snapback transition signifying uncontrolled and rapid phase transition of VO2. Additionally, E-field dependent Raman spectroscopy revealed modulation of phase transition of VO2 monitored via Raman peaks and triggered via square signal of E-field. These findings suggest that epitaxial thin film of VO2 can be explored for further studies involving modulation of phase change properties via E-field that find direct applications in neuromorphic devices, THz transmissions, thermal switches.

Keywords: Vanadium Dioxide; EMIT; PLD; Thermal switching