Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 40: Oxide Semiconductors: Transport and Spectroscopy
HL 40.5: Talk
Thursday, March 12, 2026, 10:30–10:45, POT/0251
Spatially Resolved Phase Transition and Characterization in Gallium Oxide — Umutcan Bektas1, Paul Chekhonin2, Nico Klingner1, Azat Abdullayev3, Alexander Azarov4, René Hübner1, Zhandos Utegulov3, Andrej Kuznetsov4, and •Gregor Hlawacek1 — 1Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany — 2Resource Ecology, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany — 3Department of Physics, Nazarbayev University, 010000, Astana, Kazakhstan — 4Centre for Materials Science and Nanotechnology, University of Oslo, N-0316, Oslo, Norway
In this study, we investigate ion-irradiated β-Ga2O3 samples (varying ions and fluences) alongside α- and κ-Ga2O3 thin films. Using focused ion beam (FIB) irradiation, we locally modified the samples under controlled conditions by tuning beam current, size, spacing, scan type, and ion species. Structural changes in the irradiated regions were characterized via electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). Our results demonstrate that ion induced transition to the γ polymorph can be achieved also through FIB irradiation, enabling the fabrication of in-plane polymorph patterns on the nanometer scale. Furthermore, time-domain thermoreflectance (TDTR) measurements further revealed the thermal conductivity of irradiated regions, highlighting opportunities to optimize heat transport in Ga2O3 power electronic devices. This research is supported by the tax funds on the basis of the budget passed by the Saxonian state parliament in Germany.
Keywords: Focused Ion Beam; Wide band gap semiconductor; Galliumoxide