Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 40: Oxide Semiconductors: Transport and Spectroscopy
HL 40.9: Talk
Thursday, March 12, 2026, 11:45–12:00, POT/0251
Realization of highly rectifying pn-heterojunctions and junction field-effect transistors on pulsed laser deposited α-Ga2O3 thin films — •Paul Bokemeyer, Clemens Petersen, Holger von Wenckstern, Marius Grundmann, and Sofie Vogt — University Leipzig, Felix-Bloch-Institut für Festkörperphysik, Germany
The wide band gap of about 5.3 eV[1] and a high expected breakdown field of up to 10 MV/cm[2], renders the corundum α-phase of Ga2O3 interesting for high power electronics.
We present lateral p+n-heterojunction diodes on α-Ga2O3:Sn grown by pulsed laser deposition (PLD) using a two step approach[3]. ZnCoO (ZCO) and NiO deposited by PLD at room temperature were used as p+-type materials. Further, the influence of a remote oxygen plasma treatment prior to the deposition of the p-type layers on the device performance was investigated. High current rectification ratios of 8.2 (ZCO) and 7.8 (NiO) orders of magnitude at ± 3V were achieved. Additionally, both p-type materials were used as gate materials in the fabrication of α-Ga2O3:Zr junction-field-effect-transistors (JFETs), yielding on/off current ratios of more than 9 orders of magnitude and sub-threshold-swings down to 119 mV/dec. Furthermore, breakdown was detected at drain voltages of up to 476 V which is estimated to a field of 1.7 MV/cm [4].
[1] A. Hassa et.al., J.Phys. D: Appl. Phys. 54, 223001 (2021)
[2] M. Biswas et al., APL Mater. 10, 060701 (2022)
[3] S. Vogt et al., Phys. Status Solidi A, 220 2200721 (2023)
[4] P. Bokemeyer et al.,Phys. Status Solidi RRL, 2400388 (2025)
Keywords: alpha Gallium oxide; Junction Field effect Transistors