Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 42: Nitrides III – Emerging thin films and electrochemistry
HL 42.2: Talk
Thursday, March 12, 2026, 11:45–12:00, POT/0006
Analysis of the interface properties of cubic nitride thin films grown on 3C-SiC/Si templates using electrochemical impedance spectroscopy — •Hannes Hergert1,2, Mario F. Zscherp1,2, Silas A. Jentsch1,2, Jörg Schörmann1,2, Sangam Chatterjee1,2, Peter J. Klar1,2, and Matthias T. Elm1,2 — 1Center for Materials Research, Heinrich-Buff-Ring 16, 35392 Giessen — 2Institute of Experimental Physics I, Heinrich-Buff-Ring 16, 35392 Giessen
Due to its lack of internal polarization fields cubic gallium nitride (c-GaN) is a promising semiconductor material for a variety of applications, such as high-power electronics or optoelectronic devices. High quality c-GaN can successfully be grown by molecular beam epiatxy on 3C-SiC/Si templates making use of a c-AlN buffer layer, which accommodates lattice mismatch between c-GaN and the 3C-SiC template. A reliable characterization of the interface properties as well as the electrical transport properties of c-GaN is crucial for optimizing the thin film growth as well as for designing advanced functional devices. In this work we employ electrochemical impedance spectroscopy (EIS) for characterizing the transport throught c-GaN/AlN/3C-SiC/Si sample structures with different c-GaN thicknesses and for analyzing the properties of the interface, such as the trap density.
Keywords: electrochemical impedance spectroscopy; cubic GaN; interface quallity; galliumnitride; conductance method