Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 42: Nitrides III – Emerging thin films and electrochemistry
HL 42.5: Talk
Thursday, March 12, 2026, 12:30–12:45, POT/0006
Novel TbTa(O,N)3 perovskite oxynitride for photoelectrochemical energy conversion — •Aleksandr Kochergov1,2, Gabriel Grötzner1,2, Oliver Brune1,2, Frans Munnik3, Saswati Santra1,2, Verena Streibel1,2, and Ian D. Sharp1,2 — 1Walter Schottky Institute, Technical University of Munich, Germany — 2Physics Department, TUM School of Natural Sciences, Technical University of Munich, Germany — 3Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
Perovskite oxynitride semiconductors have emerged as promising candidates for photoelectrochemical (PEC) water splitting, given their smaller band gaps (∼ 2 eV) compared to more extensively studied metal oxides. Previous studies show that in rare-earth lanthanide tantalum perovskite oxynitrides, PEC photocurrent density increases with the increment of the A-site cation atomic number [1]. However, no studies have investigated A-site cations heavier than gadolinium (Gd). This work presents a method for synthesizing the novel perovskite oxynitride TbTa(O,N)3 as thin film via spin coating followed by a sequential two-step annealing procedure in air and ammonia. X-ray diffraction shows that proper NH3 annealing conditions are crucial for obtaining the TbTa(O,N)3 perovskite structure. The resulting films are investigated for their structural, compositional, and optoelectronic properties. The results suggest a 2.3 eV band gap and n-type conductivity. Given these favorable properties, the viability of TbTa(O,N)3 as photoanode is evaluated.
[1] Zou, Qi, et al., J. Am. Chem. Soc. 2024, 146, 28182-28189
Keywords: Oxynitrides; Photoelectrochemistry; Lanthanides; Thin Films; Perovskites