Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 47: 2D Materials VIII – Quantum emitters and defects
HL 47.1: Talk
Thursday, March 12, 2026, 15:00–15:15, POT/0081
Tunable phonon sidebands of defect emitters in monolayer WSe2 heterostructures — •Felix Schaumburg1, Cornelius Diedrich2, Alberto Rodriguez2, Jeniffer König2, Corinne Steiner3, Patricia Pesch3, Axel Lorke1, Michael Lorke1, Günther Prinz1, Martin Geller1, and Annika Kurzmann2 — 1Faculty of Physics, University of Duisburg-Essen and CENIDE, Germany — 2II. Physikalisches Institut Fachgruppe Physik, Universität zu Köln, Germany — 3Fachgruppe Physik, RWTH Aachen, Germany
Van der Waals heterostructures hosting single-photon emitters have emerged as a versatile platform for exploring material properties, like phonon interactions. We investigate single-photon emission from a heterostructure composed of a graphite back gate, hBN dielectric layers, and a monolayer of WSe2. A 10 nm metallic top gate enables electrical tuning of the WSe2 layer. The entire stack is strained using lithographically defined SiO2 nanopillars. Optically active defect centers are introduced into the WSe2 monolayer by electron-beam irradiation. These defect centers in the strained regions exhibit clear single-photon emission, confirmed by second-order correlation function values below 0.5. Voltage-dependent measurements reveal a pronounced Stark shift of the emission lines as well as electrically tunable phonon sidebands. The intensity evolution of these sidebands can be described within the framework of a Franck-Condon model. Our results demonstrate deterministic position control, electrical control, and phonon-sideband engineering of quantum emitters in WSe2. This paves the way towards bright, electrically tunable emission in two-dimensional materials.
Keywords: Quantum Emitter; WSe2; Stark-Effekt; Heterosreucrures; 2D Materials