Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 47: 2D Materials VIII – Quantum emitters and defects
HL 47.3: Talk
Thursday, March 12, 2026, 15:30–15:45, POT/0081
Beyond static defects: temporal evolution of defect-driven reliability in WSe2 — •Madhuri Chennur1,2, Ulrich Kentsch1, Jens Zscharschuch1,2, and Artur Erbe1,2 — 1Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — 2TUD Dresden University of Technology, 01062 Dresden, Germany
Two-dimensional (2D) semiconductors are emerging as promising candidates for CMOS-compatible nanoscale electronics, where defects increasingly dictate electron transport. In WSe2 transistors, chalcogen vacancies commonly degrade hole mobility, yet defect-rich surfaces or interfacial contact layers have enabled ultra-low-barrier p-type contacts. However, the electrical role of these defects is almost exclusively interpreted through static pre- and post-irradiation comparisons, leaving the time-dependent evolution of engineered defect and irradiation-induced trap dynamics essentially unexplored.
Here, we present a weeks-to-months time-resolved optical-electrical study of WSe2 FETs irradiated with a single-dose broad-beam irradiation, followed by temporal tracking of threshold voltage, subthreshold swing, and hysteresis under constant bias and ambient conditions. Raman and PL spectroscopy performed in parallel reveal lattice disorder, oxidation, and adsorbate uptake. We observe a reproducible transition with shifts in electrical parameters, demonstrating that defect is intrinsically dynamic, not static. This coupled temporal mapping provides missing insight into defect-aware reliability for realistic ambient and radiation-relevant 2D electronics.