Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 52: THz and MIR Physics in Semiconductors
HL 52.5: Talk
Friday, March 13, 2026, 10:30–10:45, POT/0006
Identifying the semiconductor doping range addressable by terahertz time-domain spectroscopy — •Joshua Hennig1,2, Jens Klier1, Stefan Duran1, Mirco Kutas1,2, Georg von Freymann1,2, and Daniel Molter1 — 1Department for Materials Characterization and Testing, Fraunhofer Institute for Industrial Mathematics ITWM, 67663 Kaiserslautern, Germany — 2Department of Physics and Research Center OPTIMAS, RPTU Kaiserslautern-Landau, 67663 Kaiserslautern, Germany
Semiconductors are essential materials for the technological advancements of the 21st century. With the growing demand for semiconductor devices going along with this, the need for fast and non-destructive characterization techniques is growing quickly, too. Terahertz time-domain spectroscopy (THz-TDS) has proven to be capable of measuring the desired properties of various semiconductors over the last decades. Yet, it is still not widely established for this purpose. One reason is that for each combination of material, doping concentration and thickness the possibility to characterize the sample has to be evaluated individually. Therefore, we are developing a simulation-based tool that can help identify the accessible doping ranges. Based on simulations of the interaction between a terahertz pulse and an arbitrary layer stack of doped semiconductor materials, a well-founded estimate of the characterizability with reflection THz-TDS is retrieved. These simulations allow for a better understanding of the suitability of a THz-TDS characterization for specific semiconductor samples and hence to establish THz-TDS further in the semiconductor industry.
Keywords: Terahertz time-domain spectroscopy; Semiconductors; Characterization; Charge carrier density; Drude model