HL 52: THz and MIR Physics in Semiconductors
Friday, March 13, 2026, 09:30–10:45, POT/0006
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09:30 |
HL 52.1 |
Probing Terahertz Emission and Structural Dynamics in Quasi-two-dimensional NbOI2 — •Daniel Geyer, Rieke von Seggern, Soufiane El-Kabil, Zouchen Fu, and Sascha Schäfer
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09:45 |
HL 52.2 |
AlGaN/GaN-based grating-gate plasmonic crystals for nonlinear THz applications — Pavlo Sai, Vadym V. Korotyeyev, Serhii Kukhtaruk, Dmytro B. But, Maksym Dub, Alexej Pashkin, Stephan Winnerl, Wojciech Knap, and •Martin Mittendorff
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10:00 |
HL 52.3 |
Plasmonic nonlinearity in AlGaN/GaN-based rectangular patches — •Nandita Bajpai, Pavlo Sai, Maksym Dub, Alexej Pashkin, Stephan Winnerl, Wojciech Knap, and Martin Mittendorff
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10:15 |
HL 52.4 |
Elucidating carrier dynamics in bismuth thin film with time-resolved terahertz spectroscopy — •Gurivireddy Yettapu, Fabian Thiemann, Michael Horn-von Hoegen, and Martin Mittendorff
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10:30 |
HL 52.5 |
Identifying the semiconductor doping range addressable by terahertz time-domain spectroscopy — •Joshua Hennig, Jens Klier, Stefan Duran, Mirco Kutas, Georg von Freymann, and Daniel Molter
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