Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 55: Quantum Dots and Wires: (Single) Photonics
HL 55.10: Talk
Friday, March 13, 2026, 12:00–12:15, POT/0251
Revisiting Quantum Well Thickness Fluctuation Quantum Dots as a Source of Single Photons — •Tom Fandrich1, Frederik Benthin1, Yiteng Zhang1, Benjamin Bohn1, Maximilian Heller1, Johan Hilbig1, Tom Rakow1, Arijit Chakraborty1, Doaa Abdelbarey1, Eddy P. Rugeramigabo1, Michael Zopf1,2, and Fei Ding1,2 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover — 2Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover
Semiconductor-based quantum dots (QDs) are promising candidates for quantum network applications due to their ability to generate single, entangled, and indistinguishable photons on demand. Modern epitaxial III-V quantum emitters based on local droplet etching with nanohole infilling or Stranski-Krastanov growth exhibit excellent properties from the near-infrared to the telecom bands. An alternative from the early days of QD research involved QDs formed by thickness fluctuations in quantum well (QW) heterostructures. These QW thickness fluctuation (QWTF) QDs can naturally display strong light-matter interaction due to giant oscillator strengths, yet have not been the focus of recent research as quantum emitters for single-photon applications. In this work, we investigate the optical properties of naturally formed QWTF QDs in GaAs QWs emitting near 780 nm. Our results demonstrate that their distinctive properties justify revisiting QWTF QDs with today's standard for single-photon sources competiting against state-of-the-art epitaxial approaches.
Keywords: Quantum Dot; Semiconductor; GaAs; Single-photons