Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 55: Quantum Dots and Wires: (Single) Photonics
HL 55.11: Talk
Friday, March 13, 2026, 12:15–12:30, POT/0251
Single-Photon Emission with High Spectral Purity from Site-Controlled InGaN Quantum Dots — •Nima Hajizadeh1,2, Nils Bernhardt2, Richard Zimmermann2, Felix Nippert2, Luca Sung-Min Choi2, Benjamin Damilano3, Jean-michel Chauveau4, and Markus Wagner1,2 — 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. — 2Technische Universität Berlin, Institute of Solid State Physics — 3Université Côte d’Azur, CNRS, CRHEA — 4Université Paris Saclay, Université Versailles Saint Quentin, CNRS, GEMaC
The development of high-quality Single-Photon Emitters (SPEs) based on Indium Gallium Nitride (InGaN) Quantum Dots (QDs) is essential for advancing quantum technologies. We present a comprehensive investigation of SPEs based on novel top-down fabricated, site- and size-controlled InGaN QDs. In this work, the optical and quantum optical properties of these isolated QDs are comprehensively investigated using high-resolution, time-correlated micro-photoluminescence (µ-PL) spectroscopy, including temperature-, power- and polarization-dependent measurements, as well as hyperspectral PL mapping of their excitonic emission. The purity of the single-photon emission is evaluated by measuring the second-order intensity autocorrelation function g(2)(τ) in a Hanbury-Brown and Twiss (HBT) setup. We show that the emitter exhibits an exceptionally sharp emission bandwidth below 0.02 nm and pronounced antibunching with g(2)(0) < 0.36. These results confirm the potential of our site-controlled growth methodology to deliver high-purity SPEs with narrow spectral lines.
Keywords: Quantum dots; Single-photon emitters; Quantum emitters; Spectroscopy; Nitride nanostructures