Dresden 2026 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 55: Quantum Dots and Wires: (Single) Photonics
HL 55.9: Talk
Friday, March 13, 2026, 11:45–12:00, POT/0251
Adhesive bonding of In(Ga)As - QD membrane on Silicon for evanescent light coupling — •J. Unfried1, R. Vijayan1, U. Pfister1, D. Wendland2, S. Oberle1, M. Weiß1, M. Jetter1, S. Portalupi1, and P. Michler1 — 1IHFG, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany — 2AG Pernice, Universität Münster, Heisenbergstraße 11, 48149 Münster, Germany
Hybrid integration of III-V materials with silicon photonics involves combining efficient III-V light emitters with low-loss, CMOS-compatible Si platforms. This allows high-performance PICs to be realised. Adhesive bonding is a scalable and flexible method for achieving this integration. It provides and enables lithography-defined alignment. However, this approach also presents significant challenges. Efficient coupling between the III-V active membrane and Si waveguides (WG) requires an extremely thin, optically transparent bonding layer to enable strong evanescent coupling. Such thin layers restrict the thermal budget available for post-bonding processes, and may result in delamination during subsequent fabrication steps. Reliable integration therefore necessitates an optimised bonding process and carefully controlled fabrication conditions. This work focuses on integrating an InGaAs membrane with C-band InAs QDs onto a Si photonic platform using an optimised adhesive bonding scheme. A simulation-guided design approach is employed to identify suitable waveguide and taper geometries, and a reproducible bonding process is used to fabricate uniform, thin bonding layers and tapered InGaAs waveguides that efficiently couple QD emission into Si waveguides.
Keywords: Quantum Dots; InAs; Adhesive bonding; Photonic integrated circuit; Silicon