Dresden 2026 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 56: Quantum Emitters in 3D Semiconductors
HL 56.4: Talk
Friday, March 13, 2026, 12:00–12:15, POT/0006
Atomic force lithography positioned circular Bragg cavities for high performance quantum dot based quantum light sources. — •Abhishikth Dhurjati1, Moritz Langer1, Yared Zena1, Ahmad Rahimi1, Liesa Raith1, Martin Bauer1, Riccardo Bassoli2, Frank Fitzek3, and Caspar Hopfmann2 — 1Institute for Emerging Electronic Technologies, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany — 2Quantum Communication Networks research group, Deutsche Telekom Chair of Communication Networks, Dresden University of Technology, Germany — 3Deutsche Telekom Chair of Communication Networks, Dresden University of Technology, Germany
Semiconductor quantum dots (QDs) are excellent quantum emitters, but their random spatial distribution hinders deterministic cavity integration. We present a room-temperature atomic force microscopy (AFM) assisted nano-oxidation technique enabling deterministic QD positioning with a radial displacement of 51(28) nm. Free-standing circular Bragg gratings fabricated around positioned GaAs QDs exhibit a 245-fold photoluminescence enhancement and fine-structure splitting comparable to bulk QDs. Polarization-resolved measurements and simulations show robust cavity-coupled emission for in-plane displacements up to 50 nm and devices with Stokes imbalance below 5 percent, confirming precise alignment and a scalable route toward high-performance quantum light sources.
Keywords: GaAs Quantum dots Emitters; Entangled photon pairs; Room Temperature AFM based positioning; AFM Nano Oxidation Lithography; Circular Braggs Gratings