Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 57: Nitrides IV – Optical properties

HL 57.1: Talk

Friday, March 13, 2026, 11:30–11:45, POT/0051

Optical Properties of Sn-doped n-type GaN — •Hannah Bendin¹, Elias Kluth¹, Kazuki Ohnishi², Kansuke Hamasaki², Shugo Nitta², Naoki Fujimoto², Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano², Rüdiger Goldhahn¹, and Martin Feneberg¹ — ¹Otto-von-Guericke-Universität Magdeburg, Germany — ²Nagoya University, Japan

GaN is at the heart of many contemporary electronic and optoelectronic applications. To increase the efficiency of high-power devices, the preparation of degenerately doped n-type GaN of high quality is required. Generally, Si and Ge are introduced as dopants, each giving rise to their own challenges. For example, high Si-doping is counteracted by carrier compensation and an increase in tensile stress. Recently, Sn has also gained interest as a dopant in GaN. Initial theoretical and experimental studies show promising results, introducing Sn as a candidate for strain control in n-type GaN via co-doping with Si or Ge, as the radius mismatch between Ga and Sn causes compressive strain, unlike Si or Ge. Here, we investigate Sn-doped samples with different carrier concentrations grown by halide vapor phase epitaxy by employing a variety of optical techniques. To determine the influence of the carrier concentration in GaN:Sn on the optical properties, we apply spectroscopic ellipsometry, Raman spectroscopy, and photoluminescence. Two sets of samples have been investigated: (I) GaN:Sn on a GaN/sapphire template and (II) GaN:Sn on a freestanding GaN substrate.

Keywords: doped semiconductors; GaN; optical properties; spectroscopic ellipsometry; photoluminescence