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HL: Fachverband Halbleiterphysik

HL 57: Nitrides IV – Optical properties

HL 57.4: Vortrag

Freitag, 13. März 2026, 12:15–12:30, POT/0051

Near-Infrared Photocurrent Spectroscopy of InN Two-Terminal Devices — •Alexandra V. Nemmaier^1,2, Maximilian A. Gruber^1,2, Abhilash Ulhe^1,2, Gregor Koblmüller^1,2, and Alexander W. Holleitner^1,2 — ¹Walter Schottky Institute, TU Munich, Germany — ²Exzellenzcluster e-conversion, Munich, Germany

The semiconductor InN, with its narrow bandgap, high electron mobility, and specific carrier cooling mechanisms, is a promising platform for optoelectronics and hot carrier solar cells. We investigate epitaxial InN layers grown on GaN by near-infrared photocurrent spectroscopy. We measure the spatially resolved photocurrent to characterize the photoresponse in gated two-terminal devices. This approach offers a new perspective on hot carrier generation, charge carrier transport, and relaxation mechanisms close to the bandgap of the material.

Keywords: Hot Carriers; InN; Photocurrent; Near-Infrared