Dresden 2026 – scientific programme

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MA: Fachverband Magnetismus

MA 15: Focus Session: Quantum Sensing with Solid State Spin defects I (joint session TT/MA)

MA 15.4: Topical Talk

Tuesday, March 10, 2026, 11:15–11:45, HSZ/0003

Electron spin, nuclear spin, and optical properties of transition-metal defects in silicon carbide with perspectives for quantum technologies — •Guido Burkard — Department of Physics and IQST, University of Konstanz, 78457 Konstanz, Germany

Transition-metal (TM) defects in silicon carbide (SiC) have emerged as a promising solid-state platform for quantum technologies, particularly because certain species, such as vanadium, provide optical emission in the telecom band and thus enable efficient spin-photon interfaces and quantum memories. In parallel, high-spin nuclei in solids are attracting growing interest for quantum information processing due to their long coherence times and intrinsically large Hilbert spaces, which support advanced protocols in quantum communication, measurement-based quantum computing, and quantum sensing, as well as explorations of fundamental quantum phenomena. A scalable route toward quantum networking relies on modular devices that combine an optically addressable electronic spin with one or more nuclear-spin qudits. We present a theoretical framework for TM defects in SiC. We model the spin and optical structure of a single active 3d electron, revealing how crystal fields and spin-orbit coupling modify selection rules, the g-tensor, and Rabi dynamics. We derive the effective hyperfine interaction within the spin-orbit-induced Kramers doublets and analyze nuclear-electron state transfer. Building on these insights, we propose a driven, dissipative protocol for robust nuclear-spin polarization and investigate how strain engineering can tailor electronic levels, optical Λ systems, and spin initialization pathways.

Keywords: transition-metal defect; silicon carbide; qubit; qudit; quantum networks