Dresden 2026 – scientific programme
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MA: Fachverband Magnetismus
MA 57: Thin Films: Magnetic Coupling Phenomena / Exchange Bias and Magnetic Anisotropy
MA 57.6: Talk
Friday, March 13, 2026, 10:45–11:00, POT/0112
Voltage control of exchange bias in coupled spin-valve heterostructures — •Markus Gößler1, Jonas Zehner1,2, Rico Huhnstock3, Falk Röder2,4, Rico Ehrler1, Olav Hellwig1,5, Arno Ehresmann3, and Karin Leistner1 — 1TU Chemnitz, Germany — 2IFW Dresden, Germany — 3University of Kassel, Germany — 4IPF Dresden, Germany — 5HZDR Dresden, Germany
Exchange bias can be described as a unidirectional magnetic anisotropy that arises at the interface of a ferromagnet and an antiferromagnet, which is commonly used to pin magnetization in magnetic devices. Typically, exchange bias is initiated only once via a field cooling procedure and cannot be easily modified thereafter. Here, we demonstrate the voltage control of exchange bias in a coupled spin-valve heterostructure via a magneto-ionic (i.e. electrochemical) approach. This is accomplished in a sputtered IrMn/Fe/Au/Fe/FeOx layer structure by modifying the Fe/FeOx top layer thicknesses via voltage-triggered electrochemical reduction/oxidation in an alkaline electrolyte.[1] Magnetic interlayer coupling between the exchange-biased (untreated) Fe layer and the top Fe layer through the Au spacer allows controlling exchange bias in this system by a top layer modification only. The reversibility in our heterostructures is significantly improved compared to the direct magneto-ionic treatment of exchange-biased Fe layers. Furthermore, by tailoring the layer structure we also demonstrate a reversible switching between single-step and double-step hysteresis loops,[1] which could pave the way for magnetic field sensors with adjustable sensitivity.
[1] M. Gößler et al., ACS Appl. Mater. Interfaces 17, 49671 (2025)
Keywords: exchange bias; magneto-ionic; spin-valve; giant magnetoresistance
