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MA: Fachverband Magnetismus

MA 7: Poster Magnetism I

MA 7.20: Poster

Monday, March 9, 2026, 09:30–12:30, P2

Impact of crystallographic cuts on the magnetoelectric switching of Cr₂O₃. — •Anuvrat Tripathi, Igor Veremchuk, Oleksandr V. Pylypovskyi, Pavlo Makushko, and Denys Makarov — Helmholtz-Zentrum Dresden-Rossendorf e.V., Bautzner Landstrasse 400, 01328 Dresden, Germany

The phenomenon of magnetoelectric (ME) switching in Cr₂O₃ has been demonstrated to facilitate the control of magnetism by an electric field, a property that renders it a subject of considerable interest for applications in low-power spintronics and memory devices [1]. However, the dependence of switching efficiency on crystallographic orientation remains poorly understood [2]. A systematic study of magnetic switching in bulk Cr₂O₃ single crystals with different crystallographic cuts and epitaxial Cr₂O₃ thin films grown on Al₂O₃ substrates with varying orientations has been conducted. By applying fields over a transition from the paramagnetic to the magnetically ordered state, we are able to modify the distribution of the antiferromagnetic (AFM) domains in Cr₂O₃ and identify this change via magnetotransport. A comparison between single crystals and thin films reveal the role of crystal-cut symmetry and epitaxial grown in governing the switching process. The results of this study make it possible to optimize controlled magnetism in spintronic devices based on Cr₂O₃.

[1] P. Rickhaus, O. V. Pylypovskyi et al., Nano Letters 24, 13172 (2024).

[2] O. Pylypovskyi et al., Phys. Rev. Lett. 132, 226702 (2024).

Keywords: Cr$_{2}$O$_{3}$; magnetoelectric switching; antiferromagnetism; crystallographic orientation; spintronics