Dresden 2026 – scientific programme
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MA: Fachverband Magnetismus
MA 7: Poster Magnetism I
MA 7.52: Poster
Monday, March 9, 2026, 09:30–12:30, P2
Magnetic aftereffect and Barkhausen steps in thin Mn5Si3 films — •Gregor Skobjin1, Javier Rial2, Sebastian Beckert3,4, Helena Reichlová3,5, Vincent Baltz2, Lisa Michez6, Richard Schlitz1, Michaela Lammel1, and Sebastian Goennenwein1 — 1Department of Physics, University of Konstanz, Germany — 2Univ. Grenoble Alpes, CNRS, CEA, Gren. INP, IRIG-SPINTEC, France — 3IFMP and Würzburg-Dresden Cluster of Excellence ct.qmat, TU Dresden, Germany — 4DCN, TU Dresden, Germany — 5Institute of Physics ASCR, Czech Republic — 6Aix Marseille Université, CNRS, CINAM, AMUTECH, France
Altermagnets are an intriguing novel class of magnetic materials. We exploit the anomalous Hall effect response of micropatterned Mn5Si3 thin films to investigate their magnetization relaxation behavior. In experiments at T < 200 K i.e., in the altermagnetic phase, and for magnetic fields for which the samples exhibit large magnetic susceptibility, we observe a strong magnetic aftereffect as well as Barkhausen-like steps in the time-dependent Hall voltage evolution. More specifically, we recorded the evolution of the Hall voltage in micropatterned Hall bars with widths of 10 µm down to 0.1 µm at a series of different magnetic field magnitudes to gain insights into potential domain effects in the altermagnetic phase of Mn5Si3 at micron and submicron length scales. We critically analyze our experimental results and discuss implications for the micromagnetic structures in altermagnetic thin films.
Keywords: Magnetization Relaxation; Anomalous Hall Effect; Barkhausen Effect; Altermagnetism; Thin films