Dresden 2026 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 23: Topical Session: Dislocations in Functional Materials I (joint session MM/FM)
MM 23.4: Talk
Wednesday, March 11, 2026, 11:00–11:15, SCH/A251
Dislocation-Mediated Extraordinary Room-Temperature Plasticity in Inorganic Semiconductors — •Xiaocui Li1 and Yang Lu2 — 1Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, China — 2Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong SAR, China
Inorganic semiconductors, with their ionic or covalent bonds, are typically brittle at room temperature, restricting their use in flexible electronics. Our recent study reveals that all-inorganic perovskite (CsPbX3, X=Cl, Br, I) single-crystal micropillars can achieve extraordinary room-temperature plasticity with average plastic strain of ~64% (Nat. Mater. 2023, 22, 1175). They can be morphed into distinct geometries without cracks or cleavage. The deformation is mediated by partial dislocations on {011}<0-11> slip system, featuring four equivalent variants that address the lack of deformation pathways in ionic crystals. Sequential activation of variants prevents strain hardening and crack formation caused by dislocation reactions. First-principles calculations attribute this plasticity to low slip barriers enabling sustained deformability and strong Pb-X bonds preserving crystal integrity. Leveraging this deformability, we developed shape-customizable optoelectronic devices that maintain stable functional properties and bandgap energies post-deformation. This discovery overturns the notion of brittleness in inorganic semiconductors, and provides a foundation for advanced applications in flexible electronics and deformable sensors.
Keywords: inorganic semiconductors; plasticity; dislocation; shape-customizable devices