Dresden 2026 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MM: Fachverband Metall- und Materialphysik
MM 40: Transport in Materials: Diffusion, Charge, or Heat Conduction IV
MM 40.8: Talk
Friday, March 13, 2026, 12:15–12:30, SCH/A216
Quantum transport in α-Sn atomic-sized contacts tuned by strain — Francisco Guzmán1, Wynand Dednam2, Andres Martinez-garcia1, Enrico Lombardi2, Carlos Untiedt1, and •Carlos Sabater1 — 1University of Alicante — 2University of South Africa
Tin (Sn) transitions from metallic β-Sn (above 286 K) to α-Sn (diamond-cubic, zero-gap semiconductor) below this temperature. α-Sn’s electronic properties are theoretically tunable under strain, potentially yielding a Dirac semimetal or topological insulator. We experimentally investigated the quantum electronic transport of α-Sn nanocontacts at 4.2 K using a Scanning Tunneling Microscopy break junction (BJ) setup. Conductance measurements revealed three distinct groups via machine-learning clustering. Supported by Molecular Dynamics (MD) simulations and Density Functional Theory (DFT) calculations with Spin-Orbit Coupling (SOC), our findings demonstrate that atomic contact geometry is crucial for quantum transport in α-Sn, providing insights for spintronics applications.
Keywords: STM-Break Junctions; Molecular Dynamics; DFT; Quantum Transpor; Tin