Dresden 2026 – scientific programme
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O: Fachverband Oberflächenphysik
O 33: Graphene: Growth, structure and substrate interaction (joint session O/HL)
O 33.5: Talk
Tuesday, March 10, 2026, 11:45–12:00, HSZ/0201
Strain engineering in graphene on Ru(0001) — Paula García-Mochales1 and •Antonio J. Martínez-Galera1,2,3 — 1Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain — 2Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain — 3Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
The ability to induce and characterize strain in the atomic lattice of 2D materials, localized within only a few nanometers around specific positions, is a major challenge for the development of straintronics. In this work, the interaction between Si nanoparticles and the surface of graphene/Ru(0001) is employed to induce local strain in the latter. The strain field has been mapped at the nanoscale by scanning tunneling microscopy (STM), using the moiré pattern intrinsic to graphene/Ru(0001) surfaces as a magnifying lens. The induced strain is found to be confined within only a few nanometers around each nanoparticle. To achieve more accurate control, strain engineering at the nanometer scale was successfully performed by manipulating nanoparticles through the STM tip. This approach to controlled strain could provide a key tool for exploring new physics arising by strain in 2D materials.
Reference:
P. García-Mochales and A. J. Martínez-Galera, Nano Lett. 25, 16097-16103 (2025).
Keywords: Graphene; Strain; STM; 2D Materials