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O: Fachverband Oberflächenphysik
O 42: Electronic structure of surfaces: Spectroscopy, surface states – Poster
O 42.9: Poster
Dienstag, 10. März 2026, 14:00–16:00, P2
Wavefunction confinement of deeply buried As δ-layers in Si(001) measured with hard and soft X-ray angle-resolved photoemission spectroscopy — •Emily C. McFarlane1, Enrico G. Della Valle2, Procopios C. Constantinou2, Taylor J. Z. Stock3, Kieran Spruce3, Christoph Schlueter4, Sergii Chernov4, Thiago R. F. Peixoto4, Moritz Hoesch4, Gerd Schönhense5, Hans-Joachim Elmers5, Vladimir N. Strocov2, Neil J. Curson3, Steven R. Schofield3, and Niels B. M. Schröter1 — 1Max Planck Institute of Microstructure Physics, Halle (Saale), DE — 2Paul Scherrer Institute, Villigen PSI, CH — 3London Centre for Nanotechnology, University College London, London, UK — 4Deutsches Elektronen-Synchrotron (DESY), Hamburg, DE — 5Johannes Gutenberg University, Mainz, DE
Vertically confined regions of high concentration dopants in silicon, so-called “δ-layers”, are potential building blocks of future quantum devices. A momentum-resolved understanding of the wavefunction confinement of the electrons in such systems is required for their future development, which so far has been limited to shallow samples. Here we present both hard and soft X-ray photoelectron spectroscopy studies of shallow (∼3nm) and deeper (∼7nm) buried As δ-layers measured with a momentum microscope and hemisphere at PETRA-III and the SLS. We find that the deeper buried sample has smaller electron confinement than the shallower δ-layer, and different quantum well states are located at different depths of the sample. In contrast, in shallow δ-layers all quantum well states are located near the surface.
Keywords: Delta Layers; ARPES; 2DEG; Momentum Microscopy