Dresden 2026 – scientific programme

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O: Fachverband Oberflächenphysik

O 71: 2D Materials: Electronic structure, excitations, etc. – Poster (joint session O/TT)

O 71.14: Poster

Wednesday, March 11, 2026, 18:00–20:00, P2

Investigation of the atomic and electronic structures of WSe2-xTex — •Ganbat Duvjir¹, Nguyen-Hoang Dang², Younghun Hwang¹, and Jungdae Kim¹ — ¹Department of Semiconductor Physics and Engineering, University of Ulsan, Ulsan 44610, Republic of Korea — ²Electricity and Electronics and Semiconductor Applications, Ulsan College, Ulsan 44610, Republic of Korea

Ternary transition metal dichalcogenides (TMDs) exhibit diverse crystal structures and electronic properties depending on their composition. In this study, we systematically investigate the atomic and electronic structure of ternary WSe2-xTex as a function of Te concentration using scanning tunneling microscopy/spectroscopy (STM/S). Notably, STM topography indicates that increasing the Te content induces structural deformation of the hexagonal lattice of WSe2-xTex. This deformation manifests as the stretching of 2H structure along the zigzag direction and compression along the armchair direction. STS measurements reveal a significant reduction in the band gap of WSe2-xTex with increasing Te concentration. While the valence band maximum shifts toward the Fermi level, the conduction band minimum remains relatively unchanged.

Keywords: Ternary transition metal dichalcogenide; lattice distortion; band gap; scanning tunneling microscopy