Dresden 2026 – scientific programme
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O: Fachverband Oberflächenphysik
O 71: 2D Materials: Electronic structure, excitations, etc. – Poster (joint session O/TT)
O 71.20: Poster
Wednesday, March 11, 2026, 18:00–20:00, P2
Coexistence of a fully metallic antiphase boundary and the semiconducting charge density wave phase in 1T-TaS2 — •Georg A. Traeger1, Kai Rossnagel2,3, and Martin Wenderoth1 — 1IV. Institute of Physics, University of Göttingen, Göttingen, Germany — 2Institute of Experimental and Applied Physics, Kiel University, Kiel, Germany — 3Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
Transition metal dichalcogenides are an ideal platform for studying the interplay between charge density waves (CDWs), electronic correlations, and defect states. Using scanning tunneling microscopy and spectroscopy, we investigate a new type of intrinsic antiphase boundary (APB) in the commensurate CDW phase of 1T-TaS2. In contrast to previous studies, we find a metallic APB extending laterally across several nanometers. We observe evanescent states spilling out from the defect into the metallic region and find that the fingerprint of the semiconducting system gradually disappears within the APB, without signs of strong interactions, suggesting the orthogonality of the two systems wave functions. Our findings highlight the crucial role of domain boundaries in the interpretation of other, especially conductivity-based, measurements. Furthermore, we propose this new type of metallic APB as a model system to study interlayer coupling in correlated layered materials.
Keywords: Scanning Tunnel Microscopy; Laser; Phase Transition; 1T-TaS2