Dresden 2026 – scientific programme
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O: Fachverband Oberflächenphysik
O 73: Graphene: Growth, structure and substrate interaction – Poster
O 73.1: Poster
Wednesday, March 11, 2026, 18:00–20:00, P2
Towards enhanced spin-orbit coupling in epitaxial graphene via Pb intercalation — •Markus Gruschwitz1, Sergii Sologub1,2, Hoyeon Jeon3, Saban Hus3, An-Ping Li3, and Christoph Tegenkamp1 — 1Institut für Physik, TU Chemnitz, Germany — 2Institute of Physics, NAS of Ukraine, Kyiv, Ukraine — 3CNMS, ORNL, Oak Ridge, USA
The design of noval quantum phases by combining low dimensional materials poses the next evolution step of electronics. Intercalated epitaxial graphene on SiC embodys a van-der-Waals heterostack with well defined lattice arrangement. Stabilizing monolayers of heavy elements in proximity to graphene, potentially enhances the spin-orbit interaction (SOI) in graphene. Using Pb as intercalant, we reliably decouple and neutralize graphene by minimizing the substrate influence. At the interface coexisting striped and hexagonal superstructures emerge from local strain and density variations in the Pb monolayer. [1] Multi-probe transport measurements, assisted by finite element simulations, revealed a temperature dependent resistance. This emergent behavior was attributed to a gap opening in graphene in the order of 3-5 meV. [2] Tip--sample spacing dependent spectroscopy supports this finding by a clearly reduced density of states at the Dirac point. The desired enhanced intrinsic SOI competes with Rashba-SOI and modulations of the sublattice potential by the Pb superstructure. Although the nature of this gap was not revealed yet, it has potential to stabilize a quantum spin Hall state. [1] Adv. Mater. Interfaces 12, 21: e00617 (2025) [2] Phys. Rev. B 109, 245430 (2024)
Keywords: epitaxial graphene; quantum material; spin-orbit coupling; proximity