Dresden 2026 – scientific programme
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QI: Fachverband Quanteninformation
QI 14: Quantum Information Poster Session
QI 14.25: Poster
Wednesday, March 11, 2026, 18:00–21:00, P4
Induced quantum dot microscopy of germanium and graphene quantum devices — •Patrick Raif1,2, Aurèle Kamber1, Luca Forrer1,2, Christian Olsen1, Martino Poggio1,2, Andrea Hofmann1,2, and Floris Braakman1,2 — 1Department of Physics, Basel, Switzerland — 2Swiss Nanoscience Institute, Basel, Switzerland
Quantum dots are fundamental building blocks for semiconductor-based qubits [1], which are a promising platform for quantum computation due to the high compatibility with currently existing manufacturing technology and the potential for scaling up. In recent years, planar Ge/SiGe heterostructures have been established as a leading material for such devices, in particular for the implementation of spin qubits [2].
However, even the highest quality qubit devices show significant variations of important parameters like coherence times, pinch-off voltages, tunnel barrier heights, Landé g-factors, spin-orbit lengths, and valley splittings. These variations represent a serious obstacle for scaling up as they necessitate tuning of the individual quantum dots.
To map out the spatial variations we will apply newly developed scanning probe microscopy techniques using cantilevers that are patterned with multiple gates via electron-beam lithography [3] by inducing quantum dots in a quantum well underneath the cantilever.
[1] G. Burkard, et al., Rev. Mod. Phys. 95, 025003 (2023). [2] G. Scappucci, et al., Nat. Rev. Mat. 6, 926-943 (2021). [3] L. Forrer, et al., AIP Advances 13, 035208 (2023).
Keywords: Induced Quantum Dot; Scanning Gate Microscopy; Cantilever Patterning; Ge/SiGe; Spin Qubits