Dresden 2026 – scientific programme
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QI: Fachverband Quanteninformation
QI 6: Implementations II
QI 6.2: Talk
Tuesday, March 10, 2026, 10:00–10:15, BEY/0245
Shadow Wall Epitaxy: All-in-situ fabrication of ZnSe-based Quantum Devices — •Christine Falter1,2, Yurii Kutovyi1,2, Nils von den Driesch1,2, Denny Dütz2,3, Lars R. Schreiber2,3, and Alexander Pawlis1,2 — 1Peter Grünberg Institute, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany — 2JARA-FIT, Jülich Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, Germany — 3JARA-Institute for Quantum Information, RWTH Aachen University, 52074 Aachen, Germany
The wide band-gap semiconductor ZnSe offers a wide range of unique optical and electrical properties, which make it a promising candidate for a variety of quantum devices. In standard fabrication schemes, device performance is often limited by surface states and defects introduced during ex-situ applied processing steps. With this in mind, we have developed a Shadow Wall technique for molecular beam epitaxy (MBE), which allows for all-in-situ device fabrication making all post processing steps obsolete. The technique relies on the pre-patterning of vertical walls on the substrate and the precise alignment of material fluxes during deposition. Using our technique we have realized an all-in-situ ZnSe-based field effect transistor (FET). In our contribution, we demonstrate the MBE growth of high quality ZnSe layers on pre-patterned substrates, the optimization of the electronic band-structure and the electrical characterization of the final device. The optimization of the ZnSe FET platform is a first step towards the realization of qubits based on gate defined quantum dots in ZnSe.
Keywords: Spin Qubits; Field Effect Transistor; Shadow Wall Epitaxy; Molecular Beam Epitaxy; Compound Semiconductors