Dresden 2026 – scientific programme
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SYQF: Symposium Interacting Degrees of Freedom in Ultrathin Quantum Films
SYQF 1: Interacting Degrees of Freedom in Ultrathin Quantum Films
SYQF 1.4: Invited Talk
Friday, March 13, 2026, 11:15–11:45, HSZ/AUDI
Advantages and challanges of resonance Raman scattering with infrared excitation energy — •Leonetta Baldassarre — Department of Physics, Sapienza University of Rome, I-00185 Rome Italy
Resonance Raman scattering is a valuable spectroscopic technique, providing a probe into the intertwined electronic and vibrational properties of materials. The main strength of resonance Raman lies in its ability to selectively map distinct regions of the electron and phonon dispersion simply by tuning the excitation laser energy.
I will introduce our experimental approach of performing resonance Raman by lowering the excitation energy deep into the Near-Infrared. This frequency shift is strategic, enabling us to probe scattering processes resonant with the bottom of the conduction band in narrow-band semiconductors or close to the Dirac points. I will provide an overview of the custom-built experimental setup and present the results from its application to diverse materials such as layered semiconductors like MoSe2 and MoTe2 or graphene.
Our measurements are compared to ab-initio calculations so to identify the phonons involved in the resonant processes and, in the case of graphene, introduce the existence of a momentum-dependent electron-phonon coupling between low-energy carriers and zone-boundary optical phonons. Resonance Raman scattering with infrared excitation can be thus viewed as an indispensable tool for exploring and understanding the essential, often-hidden, charge-carrier and lattice dynamics that define the physics of low-dimensional quantum matter.
Keywords: Semiconductors; Resonant scattering processes; Spectroscopic techniques