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TT: Fachverband Tiefe Temperaturen
TT 24: Focus Session: Quantum Sensing with Solid State Spin defects I (joint session TT/MA)
TT 24.2: Topical Talk
Tuesday, March 10, 2026, 10:00–10:30, HSZ/0003
Optically addressable spin defects in two-dimensional materials — •Vladimir Dyakonov — Julius-Maximilians-Universität Würzburg, 97074 Würzburg, Germany
Two-dimensional (2D) materials have emerged as the new playground for quantum photonics devices. Among them, hexagonal boron nitride (hBN) is an interesting candidate, mainly because of its crystallographic compatibility with different 2D materials, but also because of its ability to harbour optically active defects generating single photons. The negatively charged boron vacancy was the first intrinsic, optically addressable spin defect in hBN that allows coherent control at room temperature, as reported in 2020. [1] Although other types of spin centers have been found in this material since then, this spin-1 color center remains the only one with a clearly elucidated structure. Practical applications of hBN spin centres as intrinsic magnetic field, temperature, etc. sensors in van der Waals heterostructures are hence envisioned. To further boost the quantum sensing applications of this spin defect in hBN, we investigated the dynamics of the intermediate state, because it is likely to trap electrons for a certain time, which affects the subsequent sensing protocol when the pulsed magnetic resonance experiment is designed.[2] Finally, we found that spin defects exhibit a direct correlation between Raman features and PL intensity, which allowed us to develop an all-optical method for determining the absolute spin defect density in flakes. [3]
[1] A. Gottscholl et al., Nat. Mater. 19, 540 (2020)
[2] P. Konrad et al., arXiv:2503.22815 [quant-ph] (2025)
[3] A. Patra et al., Adv. Funct. Mater. e17851 (2025).
Keywords: hexagonal boron nitride; optically detected magnetic resonance; magnetic field sensing; spin coherence