Dresden 2026 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 4: Graphene, 2D and Twisted Materials

TT 4.10: Talk

Monday, March 9, 2026, 12:00–12:15, HSZ/0105

Tuning surface resonance states on black phosphorus — •Dongming Zhao¹, Byeongin Lee², Junho Bang², Claudia Felser¹, Jian-Feng Ge¹, and Doohee Cho² — ¹Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — ²Department of Physics, Yonsei University, Seoul 03722, Republic of Korea

Surface resonance states can significantly alter how semiconductors respond to external electric fields. When present, such states can accommodate charge accumulation at the surface, reducing the response from bulk carriers and thereby suppressing band bending. In this work, we show that surface-resonance states near the band edge of black phosphorus couple strongly to the tip-induced electrostatic potential in scanning tunneling spectroscopy. This coupling produces a characteristic dip in the tunneling conductance spectrum. Our simulations indicate that this dip arises from a field-driven change in the tunneling probability into surface resonance states. By effectively tuning the electric field in the junction, we drive the surface-resonance band across the Fermi level, enhancing its contribution to the tunneling current. Our results illustrate how localized surface resonances under an external field dominate electrostatic screening, highlighting their importance in designing and operating semiconductor devices.

Keywords: surface resonance state; black phosphorus; scanning tunneling microscopy; tip-induced band bending