Dresden 2026 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 49: Correlated Electrons: Charge Order

TT 49.4: Talk

Wednesday, March 11, 2026, 11:30–11:45, HSZ/0101

Doping tunable charge density waves in misfit layer compounds — •Hugo Le Du¹, Ludovica Zullo², Justine Cordiez³, Robin Salvatore¹, Daniel Schmieg¹, Giovanni Marini⁴, François Debbontridder¹, Marie Hervé¹, Shunsuke Sasaki³, Florent Pawula³, Etienne Janod³, Matteo Calandra⁴, Laurent Cario³, and Tristan Cren¹ — ¹Institut des Nanosciences de Paris, Sorbonne Université, Paris, France — ²Julius-Maximilians-Universität Würzburg, Würzburg, Germany — ³Institut des Matériaux de Nantes, Nantes, France — ⁴University of Trento, Italy

Misfit layer compounds are van der Waals heterostructures formed by stacking transition metal dichalcogenide (TMD) and monochalcogenide layers. Theoretically, charge transfer from monochalcogenide to TMD layers results in significant doping. Adjusting the monochalcogenide composition enables precise control over TMD doping levels. We show via scanning tunneling microscopy (STM) that in (La_xPb_1−xSe)1.14(NbSe₂)₂, the NbSe₂ Fermi level shifts from 0.0 eV to 0.3 eV by varying La content. Combining STM with DFT calculations, we demonstrate that NbSe₂ transitions from the conventional 3×3 CDW state to alternative configurations at higher doping. Superconducting properties also change, offering a novel platform to explore the interplay between superconductivity and charge density waves.

Keywords: Misfit layer compounds; Charge density waves; Superconductivity; Tunability; Scanning Tunneling Microscope